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Package Marking and Ordering Information
Device Marking
FDB2710
Device
FDB2710
Package
D 2 -P A K
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0V, I D = 250 μ A, T J = 25 ° C
I D = 250 μ A, Referenced to 25 ° C
V DS = 250V, V GS = 0V
V DS = 250V, V GS = 0V,T C = 125 ° C
V GS = 30V, V DS = 0V
V GS = -30V, V DS = 0V
250
--
--
--
--
--
--
0.25
--
--
--
--
--
--
1
500
100
-100
V
V/ ° C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 25A
V DS = 10V, I D = 25A
3.0
--
--
4.0
36.3
63
5.0
42.5
--
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
--
--
--
5470
426
97
7280
570
146
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 125V, I D = 50A
V GS = 10V, R GEN = 25 Ω
V DS = 125V, I D = 50A
V GS = 10V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
80
252
112
154
78
34
18
170
515
235
320
101
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
50
150
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 50A
V GS = 0V, I S = 50A
dI F /dt =100A/ μ s
--
--
--
--
163
1.3
1.2
--
--
V
ns
μ C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I AS = 17A, V DD = 50V, R G = 25 Ω , Starting T J = 25 ° C
3. I SD ≤ 50A, di/dt ≤ 100A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
4. Essentially Independent of Operating Temperature Typical Characteristics
?200 6 Fairchild Semiconductor Corporation
FD B 2710 Rev. C1
2
www.fairchildsemi.com
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